View APT5510LFLL_1211791.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT5510B2FLL APT5510LFLL
550V 49A 0.100
POWER MOS 7
(R)
R
FREDFET
B2FLL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
T-MAXTM
TO-264
LFLL
* Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT5510 UNIT Volts Amps
550 49 196 30 40 568 4.55 -55 to 150 300 49 35
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
550 49 0.100 250 1000 100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 24.5A)
Ohms A nA Volts
3-2003 050-7189 Rev A
Zero Gate Voltage Drain Current (VDS = 550, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 440, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT5510B2FLL - LFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 275V ID = 49A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 275V ID = 49A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 367V, VGS = 15V ID = 49A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 367V VGS = 15V ID = 49A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
5823 1124 81 124 34 64 16 12 33 5 697 577 1025 664
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
49 196 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -49A)
5
dv/
t rr
Reverse Recovery Time (IS = -49A, di/dt = 100A/s) Reverse Recovery Charge (IS = -49A, di/dt = 100A/s) Peak Recovery Current (IS = -49A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
260 600 1.9 5.7 15 23
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.22 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.25
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 2.08mH, RG = 25, Peak IL = 49A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID49A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.9
0.7 0.15 0.5 0.10 0.3 0.05 0.1 0.05 0 10-5 10-4 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
3-2003
050-7189 Rev A
Z
JC
SINGLE PULSE 1.0
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
140
RC MODEL
APT5510B2FLL - LFLL
VGS =15 & 10V
ID, DRAIN CURRENT (AMPERES)
Junction temp. ( "C) 0.0144 0.00575F
120 100
7.5V
7V 80 60 40 20 0 6.5V
Power (Watts)
0.0763
0.0186F
6V 5.5V 5V
0.130 Case temperature
0.278F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 140 120 100 80 60 40 20 0
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
1.40
V
GS
NORMALIZED TO = 10V @ 24.5A
ID, DRAIN CURRENT (AMPERES)
1.30 1.20
1.10
VGS=10V
TJ = +125C TJ = +25C
TJ = -55C
1.00
VGS=20V
0.90 0.80
0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
50
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I
D
1.15
ID, DRAIN CURRENT (AMPERES)
40
1.10
1.05
30
1.00
20
0.95 0.90 0.85 -50
10
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 24.5A V
GS
0 25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
= 10V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.0
1.1
1.0
1.5
0.9 0.8
1.0
0.5
0.7 0.6 -50
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7189 Rev A
3-2003
APT5510B2FLL - LFLL
197
ID, DRAIN CURRENT (AMPERES)
20,000
OPERATION HERE LIMITED BY RDS (ON)
10,000
100
Ciss
C, CAPACITANCE (pF)
100S 10 1mS TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 550 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = 49A
1,000
Coss
100
Crss
10mS 10
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
D
200 100 TJ =+150C TJ =+25C
12
VDS=110V VDS=275V
8
VDS=440V
10
4
40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 100 td(off) 80
td(on) and td(off) (ns)
V = 367V
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 100
V
DD G
= 367V
R
= 5
80
T = 125C
J
L = 100H
DD G
tf
60
R
= 5
T = 125C
J
L = 100H
tr and tf (ns)
60
40
40
20 td(on) 0 0 40 60 80 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
20
tr
0 20 40 60 80 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 3000
= 367V R = 5
0
20
2000
T = 125C
J
1500
L = 100H E ON includes diode reverse recovery.
SWITCHING ENERGY (J)
SWITCHING ENERGY (J)
Eon
2500
Eoff
2000 1500 1000
V I
DD
1000
Eon
= 367V
3-2003
500 Eoff 0 40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 10 20 30
D J
= 49A
T = 125C
500 0
050-7189 Rev A
L = 100H E ON includes diode reverse recovery.
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
Gate Voltage
APT5510B2FLL - LFLL
10 % TJ = 125 C td(on)
90%
Gate Voltage T = 125 C J
td(off)
Drain Voltage
Drain Current
90% tr 5%
Switching Energy
90% tf
10 %
Drain Voltage
Switching Energy
10% 0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7189 Rev A
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
3-2003
Gate Drain Source
Gate Drain Source

▲Up To Search▲

Price & Availability of APT5510LFLL

	To Download APT5510LFLL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .